Technical parameters/polarity: NPN
Technical parameters/dissipated power: 75000 mW
Technical parameters/breakdown voltage (collector emitter): 55 V
Technical parameters/maximum allowable collector current: 4A
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 75000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-66
External dimensions/packaging: TO-66
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3054
|
NTE Electronics | 功能相似 | TO-66 |
BJT, NPN, High Power Switching Transistor, IC 4A
|
||
2N3054
|
Microsemi | 功能相似 | TO-66 |
BJT, NPN, High Power Switching Transistor, IC 4A
|
||
2N3054
|
NJS | 功能相似 |
BJT, NPN, High Power Switching Transistor, IC 4A
|
|||
2N3054
|
Central Semiconductor | 功能相似 | TO-66-2 |
BJT, NPN, High Power Switching Transistor, IC 4A
|
||
2N3054A
|
Semelab | 功能相似 |
NPN POWER TRANSISTOR IN A HERMETIC PACKAGE
|
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