Technical parameters/drain source resistance: 7.00 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.60 W
Technical parameters/leakage source breakdown voltage: 250 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 316 mA
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-89
External dimensions/packaging: SOT-89
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TN5325N8
|
Supertex | 功能相似 | SOT-89 |
SOT-89 N-CH 250V 0.316A
|
||
TN5325N8
|
Microchip | 功能相似 | SOT-89 |
SOT-89 N-CH 250V 0.316A
|
||
TN5325N8-G
|
Supertex | 类似代替 | SOT-89 |
Trans MOSFET N-CH 250V 0.316A 4Pin(3+Tab) SOT-89
|
||
TN5325N8-G
|
Microchip | 类似代替 | SOT-89 |
Trans MOSFET N-CH 250V 0.316A 4Pin(3+Tab) SOT-89
|
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