Encapsulation parameters/Encapsulation: SOT-363
External dimensions/packaging: SOT-363
Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): 10V
Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): 8V
Other/Collector Continuous Output Current (IC): 10mA
Other/Cut off Frequency fTTransmission Frequency (fT): 7.5Ghz
Other/DC current gain hFEDC Current Gain (hFE): 30~200
Other/dissipated power PcPower Dissipation: 80mW
Other/Specification PDF: __
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BFM505,115
|
NXP | 功能相似 | TSSOP-6 |
Trans RF BJT NPN 8V 0.018A 0.5W(1/2W) 6Pin TSSOP T/R
|
||
BFS480
|
Siemens Semiconductor | 功能相似 | SOT-363 |
NPN硅晶体管RF NPN Silicon RF Transistor
|
||
BFS481
|
Infineon | 功能相似 | SOT-363 |
NPN硅晶体管RF NPN Silicon RF Transistor
|
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