Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 1.5A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Other/Product Lifecycle: Active
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3762
|
Microsemi | 完全替代 | TO-39 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
||
|
|
Microsemi | 类似代替 | TO-5 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
||
JANTX2N3762L
|
Microchip | 类似代替 | TO-5-3 |
PNP开关硅晶体管 PNP SWITCHING SILICON TRANSISTOR
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review