Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50.0 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 1000
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: PDIP-16
External dimensions/length: 19.55 mm
External dimensions/width: 6.85 mm
External dimensions/height: 3.43 mm
External dimensions/packaging: PDIP-16
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MC1413BDG
|
ON Semiconductor | 功能相似 | SOIC-16 |
ON SEMICONDUCTOR MC1413BDG 双极晶体管阵列, 达林顿, NPN, 2 V, 500 mA, 1000 hFE, SOIC
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MC1413BDR2G
|
ON Semiconductor | 功能相似 | SOIC-16 |
ON SEMICONDUCTOR MC1413BDR2G 晶体管阵列
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ULN2003A
|
ON Semiconductor | 功能相似 | SOIC |
STMICROELECTRONICS ULN2003A 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
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Allegro MicroSystems | 功能相似 | DIP |
STMICROELECTRONICS ULN2003A 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
|
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ULN2003A
|
Major Brands | 功能相似 |
STMICROELECTRONICS ULN2003A 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
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ULN2003A
|
SGS THOMSON | 功能相似 |
STMICROELECTRONICS ULN2003A 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
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ULN2003A
|
Toshiba | 功能相似 | PDIP-16 |
STMICROELECTRONICS ULN2003A 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
|
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ULN2003A
|
ETC1 | 功能相似 |
STMICROELECTRONICS ULN2003A 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
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ULN2003A
|
Motorola | 功能相似 |
STMICROELECTRONICS ULN2003A 双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, 1000 hFE, DIP
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