Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 0.4A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: PDIP
External dimensions/packaging: PDIP
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NCV1413BDR2G
|
ON Semiconductor | 功能相似 | SOIC-16 |
NPN 复合晶体管,On Semiconductor ### 标准 带 S 或 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。 ### 双极性晶体管,On Semiconductor ON Semiconductor 的各种双极晶体管,包括以下类别: 小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管
|
||
ULN2804A
|
ON Semiconductor | 功能相似 | CASE 707 |
STMICROELECTRONICS ULN2804A 双极晶体管阵列, 达林顿, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP
|
||
ULN2804A
|
Toshiba | 功能相似 |
STMICROELECTRONICS ULN2804A 双极晶体管阵列, 达林顿, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP
|
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