Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): -50V
Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): −50V
Other/Collector Continuous Output Current (IC): −100mA/-0.1A
Other/Cut off Frequency fTTransmission Frequency (fT): 250MHz
Other/DC current gain hFEDC Current Gain (hFE): 50
Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage: -100mV/-0.1V
Other/dissipated power PcPoWer Dissipation: 200mW/0.2W
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC856BLT3G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
PNP 晶体管，ON Semiconductor 这些 ON Semiconductor 双极晶体管可放大模拟或数字信号。 它们还可切换直流或用作振荡器。 ### 标准 Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声，双匹配和复杂的双极晶体管
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NSS30101LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR NSS30101LT1G 单晶体管 双极, NPN, 30 V, 100 MHz, 710 mW, 1 A, 200 hFE
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