Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 300 V
Technical parameters/Continuous drain current (Ids): 4.4A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DPAK
External dimensions/packaging: DPAK
Other/Product Lifecycle: Unknown
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQD7N30TM
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQD7N30TM, 5.5 A, Vds=300 V, 3引脚 DPAK (TO-252)封装
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