Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 300 V
Technical parameters/Continuous drain current (Ids): 4.9A
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Obsolete
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQPF5N30
|
Fairchild | 功能相似 | TO-220-3 |
300V N沟道MOSFET 300V N-Channel MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review