Technical parameters/clamp voltage: 41.4 V
Technical parameters/test current: 1 mA
Technical parameters/Maximum forward surge current (Ifsm): 100 A
Technical parameters/peak pulse power: 600 W
Technical parameters/breakdown voltage: 28.5 V
Technical parameters/forward voltage (Max): 5 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/operating temperature: -55℃ ~ 150℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: SMB
External dimensions/packaging: SMB
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Vishay Siliconix | 功能相似 | 2 |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
||
P6SMB30CA-E3/52
|
VISHAY | 功能相似 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
||
P6SMB30CA-E3/52
|
Vishay Semiconductor | 功能相似 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
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