Technical parameters/forward voltage: 1 V
Technical parameters/reverse recovery time: 35 ns
Technical parameters/forward current (Max): 8 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -50 ℃
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FES8DT-E3/45
|
VISHAY | 功能相似 | TO-220-2 |
6A 至 12A，Vishay Semiconductor Vishay 超快恢复整流器，具有非常快速的低至 15ns 反向恢复时间和高达 1500V 的电压级别。 典型应用包括较高频率切换模式电源 (SMPS)、反相器和续流二极管。 ### 二极管和整流器，Vishay Semiconductor
|
||
FES8DT-E3/45
|
Vishay Semiconductor | 功能相似 | TO-220-2 |
6A 至 12A，Vishay Semiconductor Vishay 超快恢复整流器，具有非常快速的低至 15ns 反向恢复时间和高达 1500V 的电压级别。 典型应用包括较高频率切换模式电源 (SMPS)、反相器和续流二极管。 ### 二极管和整流器，Vishay Semiconductor
|
||
|
|
EIC | 功能相似 |
Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-220AC,
|
|||
MUR820
|
Taiwan Semiconductor | 功能相似 | TO-220-2 |
Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-220AC,
|
||
|
|
Fairchild | 功能相似 | Through Hole |
Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-220AC,
|
||
|
|
VISHAY | 功能相似 | TO-220 |
Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-220AC,
|
||
MUR820
|
Vishay Semiconductor | 功能相似 | TO-220-2 |
Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-220AC,
|
||
MUR820
|
Intersil | 功能相似 |
Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, TO-220AC,
|
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