Encapsulation parameters/Encapsulation: SOT-323
External dimensions/packaging: SOT-323
Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): 20V
Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): 10V
Other/Collector Continuous Output Current (IC): 35mA
Other/Cut off Frequency fTTransmission Frequency (fT): 8Ghz
Other/DC current gain hFEDC Current Gain (hFE): 50~100
Other/dissipated power PcPower Dissipation: 150mW/0.15W
Other/Specification PDF: __
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC4227
|
Renesas Electronics | 功能相似 | SC-70 |
2SC4227 NPN三极管 20V 65mA 7GHz 110~240 SOT-323/SC-70 marking/标记 R35 高频放大器
|
||
2SC4227-T1
|
Renesas Electronics | 功能相似 |
Trans RF BJT NPN 10V 0.065A 3Pin Super Mini-Mold T/R
|
|||
|
|
Renesas Electronics | 功能相似 | SC-70 |
2SC4228 NPN三极管 20V 35mA 8Ghz 50~100 SOT-323/SC-70 marking/标记 R43 高频放大器
|
||
2SC4228
|
NEC | 功能相似 | SOT-323 |
2SC4228 NPN三极管 20V 35mA 8Ghz 50~100 SOT-323/SC-70 marking/标记 R43 高频放大器
|
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