Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): 60V
Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): 50V
Other/Collector Continuous Output Current (IC): 2A
Other/Cut off Frequency fTTransmission Frequency (fT): 150MHz
Other/DC current gain hFEDC Current Gain (hFE): 200~400
Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage: 150mV/0.15V
Other/dissipated power PcPower Dissipation: 800mW/0.8W
Other/Specification PDF: __
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SD1801
|
Sanyo Semiconductor | 功能相似 |
PNP/NPN Epitaxial Planar Silicon Transistors
|
|||
2SD1801S
|
Sanyo Semiconductor | 功能相似 | TO-252 |
2SD1801S NPN三极管 60V 2A 150MHz 140~280 150mV/0.15V TO-252/DPAK marking/标记 D1801 高电流开关
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review