Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.5A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-18
External dimensions/packaging: TO-18
Other/Product Lifecycle: Active
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N718A
|
Microsemi | 完全替代 | TO-18 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
||
JAN2N718A
|
Motorola | 完全替代 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
|||
JANTX2N718A
|
Microsemi | 完全替代 | TO-18 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
||
JANTX2N718A
|
Microchip | 完全替代 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
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