Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 15 @50A, 3V
Technical parameters/rated power (Max): 300 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microchip | 功能相似 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
|||
JANTX2N5686
|
Aeroflex | 功能相似 |
NPN功率硅晶体管 NPN POWER SILICON TRANSISTOR
|
|||
MJ14001G
|
ON Semiconductor | 完全替代 | TO-3 |
高?当前互补硅功率晶体管 High?Current Complementary Silicon Power Transistors
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review