Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.41 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 74 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/Continuous drain current (Ids): 9.2A
Technical parameters/Input capacitance (Ciss): 620pF @100V(Vds)
Technical parameters/rated power (Max): 74 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 74W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.5 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPD60R380C6ATMA1
|
IFC | 类似代替 |
INFINEON IPD60R380C6ATMA1 功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.34 ohm, 10 V, 3 V
|
|||
IPD60R450E6ATMA1
|
Infineon | 类似代替 | TO-252-3 |
INFINEON IPD60R450E6ATMA1 功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 0.41 ohm, 10 V, 3 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review