Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 150000 mW
Technical parameters/breakdown voltage (collector emitter): 150 V
Technical parameters/maximum allowable collector current: 15A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 150000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247
External dimensions/packaging: TO-247
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJH11020
|
ON Semiconductor | 功能相似 | TO-218-3 |
达林顿互补硅功率晶体管 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
|
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