Technical parameters/dissipated power: 10000 mW
Technical parameters/output power: 4 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 10000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-205
External dimensions/height: 8 mm
External dimensions/packaging: TO-205
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Customs information/HTS code: 85412900951
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC1169
|
Toshiba | 功能相似 |
SILICON NPN EPITAXIAL PLANAR TYPE
|
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