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Model IDH03G65C5
Description thinQ!™ Silicon carbide (SiC) Schottky diode, Infineon Infineon thinQ! ™ The 5th generation provides a new thin chip technology for silicon carbide Schottky barrier diodes, which can improve heat resistance. Infineon thinQ! ™ Schottky diodes have voltage options of 600V, 650V, and 1200V. Infineon 1200V silicon carbide diodes are highly efficient and operate without losses at 1200V. Silicon carbide Schottky diodes provide various functions for high-voltage power semiconductors, such as higher breakdown electric field strength and thermal conductivity, which can provide higher levels of efficiency. This generation of products is suitable for telecommunications SMPS and high-end servers, UPS systems, motor drives, solar inverters, PC Silverboxes, and lighting applications. Reduced EMI # # # diodes and rectifiers, Infineon
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Brand: Infineon
Packaging TO-220-2
Delivery time
Packaging method Tube
Standard packaging quantity 1
6.18  yuan 6.18yuan
10+:
$ 7.4124
100+:
$ 7.0418
500+:
$ 6.7947
1000+:
$ 6.7823
2000+:
$ 6.7329
5000+:
$ 6.6712
7500+:
$ 6.6217
10000+:
$ 6.5970
Quantity
10+
100+
500+
1000+
2000+
Price
$7.4124
$7.0418
$6.7947
$6.7823
$6.7329
Price $ 7.4124 $ 7.0418 $ 6.7947 $ 6.7823 $ 6.7329
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3150) Minimum order quantity(10)
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Technical parameters/forward voltage: 1.7V @3A

Technical parameters/dissipated power: 42 W

Technical parameters/thermal resistance: 3.6℃/W (RθJC)

Technical parameters/reverse recovery time: 0 ns

Technical parameters/forward current: 3 A

Technical parameters/Maximum forward surge current (Ifsm): 31 A

Technical parameters/forward voltage (Max): 2.1 V

Technical parameters/forward current (Max): 3 A

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/working junction temperature (Max): 175 ℃

Technical parameters/dissipated power (Max): 42000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 2

Encapsulation parameters/Encapsulation: TO-220-2

External dimensions/length: 10.2 mm

External dimensions/width: 4.5 mm

External dimensions/height: 15.95 mm

External dimensions/packaging: TO-220-2

Physical parameters/operating temperature: -55℃ ~ 175℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IDH08S120 IDH08S120 Infineon 类似代替 TO-220-2
THINQ SiC肖特基二极管 thinQ SiC Schottky Diode
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