Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 370 mA
Technical parameters/number of channels: 1
Technical parameters/polarity: N-Channel
Technical parameters/input capacitance: 70.0 pF
Technical parameters/gate charge: 2.40 nC
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 380 mA, 370 mA
Technical parameters/rise time: 5.00 ns
Technical parameters/Input capacitance (Ciss): 70pF @25V(Vds)
Technical parameters/rated power (Max): 1.79 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-223-3
External dimensions/width: 3.5 mm
External dimensions/packaging: SOT-223-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSP123
|
Siemens Semiconductor | 功能相似 | SOT-223 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
|
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