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Description High speed infrared light-emitting diode, RoHS compliant, 830 nanometer, GaAlAs double heterojunction High Speed Infrared Emitting Diode, RoHS Compliant, 830 nm, GaAlAs Double Hetero
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Other/RoHS status: Compliant with ROHS3 specifications

Other/Moisture Sensitivity Level (MSL): 3(168 Hour)

Other/REACH status: Non REACH products

Other/ECCN: EAR99

Other/HTSUS: 8541.41.0000

Other/Manufacturers: Vishay Semiconductor Opto Division

Other/Series: -

Other/Packaging: Roll Tape (TR)

Other/Product Status: discontinue production

Other/Type: Infrared (IR)

Other/Current - DC Forward (If) (Maximum): 100mA

Minimum radiation intensity (Ie) for other/different If values: 6mW/sr @ 100mA

Other/wavelength: 830nm

Other/Voltage - Forward (Vf) (Typical Value): 1.5V

Other/Perspectives: 120°

Other/Direction: top view

Other/working temperature: -40°C ~ 85°C(TA)

Other/Installation Types: Surface mount type

Other/Packaging/Shell: 2-SMD,J Shaped lead wire

Compliant with standards/RoHS standards: RoHS Compliant

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