Technical parameters/forward voltage: 1 V
Technical parameters/Maximum reverse voltage (Vrrm): 200V
Technical parameters/forward current: 6 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: PBU
External dimensions/length: 23.7 mm
External dimensions/width: 7.1 mm
External dimensions/height: 19.3 mm
External dimensions/packaging: PBU
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KBU6D
|
DC Components | 功能相似 |
Bridge Rectifier Diode, 1 Phase, 4.2A, 200V V(RRM), Silicon, 23.50 X 19.3MM, 5.7MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
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KBU6D
|
General Instrument | 功能相似 |
Bridge Rectifier Diode, 1 Phase, 4.2A, 200V V(RRM), Silicon, 23.50 X 19.3MM, 5.7MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
|||
|
|
Good-Ark Electronics | 功能相似 | KBU |
Bridge Rectifier Diode, 1 Phase, 4.2A, 200V V(RRM), Silicon, 23.50 X 19.3MM, 5.7MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
||
KBU6D
|
Mospec | 功能相似 |
Bridge Rectifier Diode, 1 Phase, 4.2A, 200V V(RRM), Silicon, 23.50 X 19.3MM, 5.7MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
|||
KBU6D
|
Fairchild | 功能相似 | SIP-4 |
Bridge Rectifier Diode, 1 Phase, 4.2A, 200V V(RRM), Silicon, 23.50 X 19.3MM, 5.7MM HEIGHT, ROHS COMPLIANT, PLASTIC PACKAGE-4
|
||
|
|
Diotec Semiconductor | 功能相似 |
200V 6A
|
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