Encapsulation parameters/Encapsulation: SOT-523
External dimensions/packaging: SOT-523
Other/collector base reverse breakdown voltage V (BR) CBO Collector Base Voltage (VCBO): 50V
Other/Collector emitter reverse breakdown voltage V (BR) CEO Collector Emiter Voltage (VCEO): 50V
Other/collector continuous output current IC Collector Current (IC): 100mA/0.1A
Other/Base Input Resistance R1 Input Resistance (R1): 10KΩ/Ohm
Other/Base emitter input resistance R2 Base emitter Resistance (R2): 10KΩ/Ohm
Other/Resistance Ratio (R1/R2): 1
Other/DC current gain hFE DC current gain (hFE): 50
Other/Cut off Frequency fT Transition Frequency (fT): 200MHz
Other/dissipated power Pc Power Dissipation: 0.2W/200mW
Other/Specification PDF: __
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DDTC114EE-7-F
|
Diodes | 功能相似 | SOT-523-3 |
特性外延平面电路小片建设互补PNP类型有(DDTA)内置偏置电阻R1= R2无铅/ RoHS标准
|
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