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Model 2MBI450U4J-120-50
Description IGBT Discrete, Fuji Electric IGBT discrete components and modules, Fuji Electric insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.
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Brand: FUJI
Packaging MODULE
Delivery time
Packaging method
Standard packaging quantity 1
2567.08  yuan 2567.08yuan
1+:
$ 2823.7891
10+:
$ 2798.1183
25+:
$ 2785.2829
50+:
$ 2772.4475
100+:
$ 2759.6121
150+:
$ 2746.7767
250+:
$ 2733.9413
500+:
$ 2721.1059
Quantity
1+
10+
25+
50+
100+
Price
$2823.7891
$2798.1183
$2785.2829
$2772.4475
$2759.6121
Price $ 2823.7891 $ 2798.1183 $ 2785.2829 $ 2772.4475 $ 2759.6121
Start batch production 1+ 10+ 25+ 50+ 100+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9671) Minimum order quantity(1)
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Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2.08 kW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/dissipated power (Max): 2.08 kW

Encapsulation parameters/installation method: Screw

Package parameters/number of pins: 22

Encapsulation parameters/Encapsulation: Module

External dimensions/length: 150 mm

External dimensions/width: 62 mm

External dimensions/height: 17 mm

External dimensions/packaging: Module

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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