Technical parameters/rated voltage (DC): 650 V
Technical parameters/rated current: 15.0 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 280 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 156 W
Technical parameters/input capacitance: 1.66 nF
Technical parameters/gate charge: 63.0 nC
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/Continuous drain current (Ids): 15.0 A
Technical parameters/rise time: 5 ns
Technical parameters/Input capacitance (Ciss): 1660pF @25V(Vds)
Technical parameters/rated power (Max): 156 W
Technical parameters/descent time: 5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 156000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/length: 10.2 mm
External dimensions/width: 4.5 mm
External dimensions/height: 9.45 mm
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SPI15N60C3HKSA1
|
Infineon | 功能相似 | TO-262-3-1 |
TO-262 N-CH 600V 15A
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review