Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 20.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 42.0 W
Technical parameters/product series: IRFI540N
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Continuous drain current (Ids): 20.0 A
Technical parameters/rise time: 39 ns
Technical parameters/Input capacitance (Ciss): 1400pF @25V(Vds)
Technical parameters/descent time: 33 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 54000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFI540GPBF
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International Rectifier | 功能相似 |
功率MOSFET Power MOSFET
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IRFI540GPBF
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VISHAY | 功能相似 | TO-220-3 |
功率MOSFET Power MOSFET
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IRFI540GPBF
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Vishay Semiconductor | 功能相似 | TO-220-3 |
功率MOSFET Power MOSFET
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IRFI540NPBF
|
International Rectifier | 类似代替 | TO-220-3 |
INFINEON IRFI540NPBF 晶体管, MOSFET, N沟道, 20 A, 100 V, 52 mohm, 10 V, 4 V
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IRFI540NPBF
|
Infineon | 类似代替 | TO-220-3 |
INFINEON IRFI540NPBF 晶体管, MOSFET, N沟道, 20 A, 100 V, 52 mohm, 10 V, 4 V
|
||
IRFI540NPBF
|
IFC | 类似代替 |
INFINEON IRFI540NPBF 晶体管, MOSFET, N沟道, 20 A, 100 V, 52 mohm, 10 V, 4 V
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