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Model 2SK2607(F)
Description TOSHIBA 2SK2607(F) Power Field Effect Transistor, MOSFET, N-channel, 9 A, 800 V, 1.2 ohm, 10 V, 4 V
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Brand: Toshiba
Packaging TO-3
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1689) Minimum order quantity(1)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 1.2 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 150 W

Technical parameters/threshold voltage: 4 V

Technical parameters/drain source voltage (Vds): 800 V

Technical parameters/Continuous drain current (Ids): 9.00 A

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-3

External dimensions/packaging: TO-3

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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