Technical parameters/dissipated power: 500 mW
Technical parameters/voltage regulation value: 28 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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EIC | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5255B 单管二极管 齐纳, 28 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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1N5255B
|
ON Semiconductor | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5255B 单管二极管 齐纳, 28 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5255B
|
Vishay Semiconductor | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5255B 单管二极管 齐纳, 28 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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|
|
Motorola | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5255B 单管二极管 齐纳, 28 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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|
CHENG-YI | 类似代替 |
FAIRCHILD SEMICONDUCTOR 1N5255B 单管二极管 齐纳, 28 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
|
|
Diodes | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5255B 单管二极管 齐纳, 28 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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|
|
DC Components | 类似代替 |
FAIRCHILD SEMICONDUCTOR 1N5255B 单管二极管 齐纳, 28 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
1N5255B
|
先科ST | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5255B 单管二极管 齐纳, 28 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
1N5255B-TR
|
LiteOn | 功能相似 | DO-35 |
500mW，1N52xx 系列，Vishay Semiconductor ### 齐纳二极管，Vishay Semiconductor
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1N5255B-TR
|
Vishay Semiconductor | 功能相似 | DO-35-2 |
500mW，1N52xx 系列，Vishay Semiconductor ### 齐纳二极管，Vishay Semiconductor
|
||
MMSZ5255BT1G
|
ON Semiconductor | 功能相似 | SOD-123 |
ON SEMICONDUCTOR MMSZ5255BT1G 齐纳二极管
|
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