Chip AI consultant
Technical parameters/dissipated power: 500 mW
Technical parameters/voltage regulation value: 6.2 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
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Good-Ark Electronics | 功能相似 |
FAIRCHILD SEMICONDUCTOR BZX55C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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Semelab | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BZX55C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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Sensitron Semiconductor | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX55C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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ON Semiconductor | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX55C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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Panjit | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX55C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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BZX55C6V2
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Kingtronics | 功能相似 |
FAIRCHILD SEMICONDUCTOR BZX55C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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BZX55C6V2
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Rectron | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX55C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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BZX55C6V2
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XKST | 功能相似 |
FAIRCHILD SEMICONDUCTOR BZX55C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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BZX55C6V2
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ST Microelectronics | 功能相似 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX55C6V2 单管二极管 齐纳, 6.2 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
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BZX55C6V2-TAP
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Vishay Semiconductor | 功能相似 | DO-35-2 |
500mW，BZX55C 系列，Vishay Semiconductor 小信号齐纳二极管 超剧烈反向特性 低反向电流电平 非常高的稳定性 低噪声 符合 AEC-Q101 ### 齐纳二极管，Vishay Semiconductor
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BZX55C6V2-TAP
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VISHAY | 功能相似 | DO-35 |
500mW，BZX55C 系列，Vishay Semiconductor 小信号齐纳二极管 超剧烈反向特性 低反向电流电平 非常高的稳定性 低噪声 符合 AEC-Q101 ### 齐纳二极管，Vishay Semiconductor
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