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Model BAS70-04LT1
Description SCHOTTKY BARRIER DIODES
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Brand: Motorola
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Standard packaging quantity 1
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7440) Minimum order quantity(1)
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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BAS70-04 BAS70-04 Comchip Technology 功能相似
肖特基势垒二极管，高达 120mA，Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
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BAS70-04 BAS70-04 NXP 功能相似 SOT-23-3
肖特基势垒二极管，高达 120mA，Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
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BAS70-04 BAS70-04 Infineon 功能相似 SOT-23-3
肖特基势垒二极管，高达 120mA，Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
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BAS70-04 BAS70-04 SLKOR. 功能相似 SOT-23
肖特基势垒二极管，高达 120mA，Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
BAS70-04 BAS70-04 Microsemi 功能相似 SOT-23
肖特基势垒二极管，高达 120mA，Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
PDF
BAS70-04 BAS70-04 Taiwan Semiconductor 功能相似 SOT-23-3
肖特基势垒二极管，高达 120mA，Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
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BAS70-04LT1G BAS70-04LT1G ON Semiconductor 类似代替 SOT-23-3
ON SEMICONDUCTOR BAS70-04LT1G 小信号肖特基二极管, 双系列, 70 V, 15 mA, 1 V, 100 mA, 150 °C
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