Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/maximum source drain voltage Vds Drain Source Voltage: 30V
Other/Maximum Gate Source Voltage Vgs (±) Gate Source Voltage: 15V
Other/Maximum Drain Current Id Drain Current: 4A
Other/source drain on resistance Ω Rds D Ω/Ohmin Sou Ω/Ohmce On State Ω/Ohmesis: 0.085Ω/Ohm @2A,10V
Other/turn-on voltage Vgs (th) Gate Source Threshold Voltage: 1-2V
Other/dissipative power Pd Power Dissipation: 1W
Other/Specification PDF: __
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK1468
|
Sanyo Semiconductor | 功能相似 | TO-252 |
2SK1468 N沟道MOSFET 30V 4A TO-252/TP-FA marking/标记 K1468 高速开关/低导通电阻/低电压驱动
|
||
2SK1469
|
Sanyo Semiconductor | 功能相似 | TO-252 |
2SK1469 N沟道MOSFET 30V 8A TO-252/TP-FA marking/标记 K1469 高速开关/低导通电阻/低电压驱动
|
||
2SK1472
|
Sanyo Semiconductor | 功能相似 | TO-252 |
2SK1472 N沟道MOSFET 60V 8A TO-252/TP-FA marking/标记 K1472 高速开关/低导通电阻/低电压驱动
|
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