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Model SPW11N60S5
Description Infineon CoolMOS™S5 Power MOSFET Series # # MOSFET Transistors, Infineon's extensive and comprehensive MOSFET equipment portfolio includes OptiMOS ™ With CoolMOS ™ Series. These products offer top-notch performance in the latest generation of state-of-the-art power MOSFETs
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Brand: Infineon
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
13.02  yuan 13.02yuan
5+:
$ 15.2276
50+:
$ 14.5768
200+:
$ 14.2124
500+:
$ 14.1213
1000+:
$ 14.0302
2500+:
$ 13.9261
5000+:
$ 13.8610
7500+:
$ 13.7959
Quantity
5+
50+
200+
500+
1000+
Price
$15.2276
$14.5768
$14.2124
$14.1213
$14.0302
Price $ 15.2276 $ 14.5768 $ 14.2124 $ 14.1213 $ 14.0302
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8107) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): 600 V

Technical parameters/rated current: 11.0 A

Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 125 W

Technical parameters/input capacitance: 1.46 nF

Technical parameters/gate charge: 54.0 nC

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/Continuous drain current (Ids): 11.0 A

Technical parameters/rise time: 35 ns

Technical parameters/Input capacitance (Ciss): 1460pF @25V(Vds)

Technical parameters/rated power (Max): 125 W

Technical parameters/descent time: 20 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 125 W

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-247-3

External dimensions/length: 15.9 mm

External dimensions/width: 5.3 mm

External dimensions/height: 20.95 mm

External dimensions/packaging: TO-247-3

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SPW11N60S5 SPW11N60S5 Feeling 功能相似
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SPW11N60S5 SPW11N60S5 Infineon 功能相似 TO-247-3
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
PDF
SPW11N60S5 SPW11N60S5 Siemens Semiconductor 功能相似
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
PDF

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