Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.5A
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC808-16
|
NXP | 类似代替 | SOT-23 |
Trans GP BJT PNP 25V 0.8A Automotive 3Pin SOT-23 T/R
|
||
BC808-25
|
Infineon | 类似代替 | SOT-23 |
Transistor: PNP; bipolar; 25V; 800mA; 310mW; SOT23
|
||
MMBTA55LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBTA55LT1G 单晶体管 双极, PNP, -60 V, 50 MHz, 225 mW, -500 mA, 100 hFE
|
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