Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): -50V
Technical parameters/maximum allowable collector current: -0.1A
Technical parameters/minimum current amplification factor (hFE): 20
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SMT
External dimensions/length: 2.9 mm
External dimensions/width: 1.6 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: SMT
Other/Product Lifecycle: Active
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DTA123EKAT146
|
ROHM Semiconductor | 功能相似 | SOT-23-3 |
ROHM DTA123EKAT146 单晶体管 双极, PNP, 50 V, 250 MHz, 200 mW, 100 mA, 20 hFE
|
||
DTA143ECAT116
|
ROHM Semiconductor | 功能相似 | SOT-23-3 |
双极晶体管 - 预偏置 PNP -100mA -50V w/bias resistor
|
||
DTC114TCAT116
|
ROHM Semiconductor | 功能相似 | SOT-23-3 |
双极晶体管 - 预偏置 NPN 100mA 50V w/bias resistor
|
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