Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 825 V
Technical parameters/maximum allowable collector current: 10A
Encapsulation parameters/Encapsulation: TOP-3
External dimensions/packaging: TOP-3
Other/Product Lifecycle: Obsolete
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NXP | 功能相似 | TO-247 |
硅扩散型功率晶体管 Silicon Diffused Power Transistor
|
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|
|
NXP | 功能相似 | TOP-3 |
硅扩散型功率晶体管 Silicon Diffused Power Transistor
|
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