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Model HUF75631SK8
Description 5.5A ， 100V ， 0.039 OhmN-channel, UltraFET Power MOSFET 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET
Product QR code
Brand: Fairchild
Packaging SOIC-8
Delivery time
Packaging method Tube
Standard packaging quantity 1
6.32  yuan 6.32yuan
10+:
$ 7.5864
100+:
$ 7.2071
500+:
$ 6.9542
1000+:
$ 6.9416
2000+:
$ 6.8910
5000+:
$ 6.8278
7500+:
$ 6.7772
10000+:
$ 6.7519
Quantity
10+
100+
500+
1000+
2000+
Price
$7.5864
$7.2071
$6.9542
$6.9416
$6.8910
Price $ 7.5864 $ 7.2071 $ 6.9542 $ 6.9416 $ 6.8910
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4176) Minimum order quantity(10)
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Technical parameters/drain source resistance: 39.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2.5 W

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/leakage source breakdown voltage: 100 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 5.50 A

Technical parameters/rise time: 23 ns

Technical parameters/descent time: 31 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/length: 4.9 mm

External dimensions/width: 3.9 mm

External dimensions/height: 1.75 mm

External dimensions/packaging: SOIC-8

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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N沟道PowerTrench MOSFET的100V ， 6A ， 35mз N-Channel PowerTrench MOSFET 100V, 6A, 35mз
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HUF75631SK8T HUF75631SK8T Freescale 类似代替
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HUF75631SK8T HUF75631SK8T ON Semiconductor 类似代替 SOIC-8
N沟道 100V 5.5A
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