Technical parameters/rated power: 125 W
Technical parameters/breakdown voltage (collector emitter): 1200 V
Technical parameters/rated power (Max): 125 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10 mm
External dimensions/width: 4.4 mm
External dimensions/height: 9.25 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SGP15N120
|
Infineon | 类似代替 | TO-220-3 |
在NPT技术降低40 %的Eoff快速IGBT相比上一代 Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
||
SGP30N60HS
|
Infineon | 完全替代 | TO-220-3 |
HIGHT SPEED IGBT芯片NPT -TECHNOLOGY HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY
|
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