Technical parameters/rated voltage (DC): 560 V
Technical parameters/rated current: 4.50 A
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.85 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 50 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 560 V
Technical parameters/Continuous drain current (Ids): 4.50 A
Technical parameters/rise time: 5 ns
Technical parameters/Input capacitance (Ciss): 470pF @25V(Vds)
Technical parameters/rated power (Max): 50 W
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 50 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.36 mm
External dimensions/width: 4.4 mm
External dimensions/height: 15.95 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SPP11N80C3
|
Infineon | 类似代替 | TO-220-3 |
INFINEON SPP11N80C3 功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.39 ohm, 10 V, 3 V
|
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