Technical parameters/rated voltage (DC): 450 V
Technical parameters/rated current: 12.0 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.4 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 180 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500V (min)
Technical parameters/Continuous drain current (Ids): 14.0 A
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
Customs information/HTS code: 85412900951
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFP450PBF
|
VISHAY | 功能相似 | TO-247-3 |
VISHAY IRFP450PBF. 晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V
|
||
IRFP450PBF
|
Vishay Precision Group | 功能相似 | TO-247 |
VISHAY IRFP450PBF. 晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V
|
||
IRFP450PBF
|
Vishay Semiconductor | 功能相似 | TO-247 |
VISHAY IRFP450PBF. 晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V
|
||
IRFP450PBF
|
Vishay Siliconix | 功能相似 | TO-247-3 |
VISHAY IRFP450PBF. 晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V
|
||
IRFP450PBF
|
International Rectifier | 功能相似 | TO-247 |
VISHAY IRFP450PBF. 晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V
|
||
IRFP450PBF
|
Infineon | 功能相似 | TO-247 |
VISHAY IRFP450PBF. 晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V
|
||
IRFP450PBF
|
LiteOn | 功能相似 | TO-247-3 |
VISHAY IRFP450PBF. 晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V
|
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