Technical parameters/dissipated power: 2.5 W
Technical parameters/rise time: 8 ns
Technical parameters/descent time: 18 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4810DY-E3
|
Vishay Siliconix | 功能相似 | SO |
Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
|
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