Technical parameters/drain source resistance: 70.0 mΩ
Technical parameters/polarity: Dual P-Channel
Technical parameters/dissipated power: 2.10 W
Technical parameters/drain source voltage (Vds): 8 V
Technical parameters/Continuous drain current (Ids): -3.40 A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: Chip
External dimensions/packaging: Chip
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review