Technical parameters/drain source resistance: 25.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.00 W
Technical parameters/breakdown voltage of gate source: ±12.0 V
Technical parameters/Continuous drain current (Ids): -7.10 A to 7.10 A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
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