Technical parameters/drain source resistance: 9.00 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.50 W
Technical parameters/breakdown voltage of gate source: ±8.00 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4465DY
|
Vishay Siliconix | 功能相似 | SOT |
MOSFET 8V 14A 2.5W
|
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