Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ST Microelectronics | 功能相似 | TO-3 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
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|
|
Fairchild | 功能相似 | 3 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
||
IRF450
|
SEME-LAB | 功能相似 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
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IRF450
|
International Rectifier | 功能相似 | TO-204 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
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