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Model SI4810DY
Description NChannel 30-V (D-S) MOSFET and Schottky diode N-Channel 30-V (D-S) MOSFET with Schottky diode
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Brand: VISHAY
Packaging SOIC
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5961) Minimum order quantity(1)
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Technical parameters/polarity: N-CH

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 10A

Technical parameters/rise time: 8 ns

Technical parameters/descent time: 18 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2500 mW

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC

External dimensions/packaging: SOIC

Compliant with standards/RoHS standards: Non-Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI4810DY-E3 SI4810DY-E3 Vishay Siliconix 功能相似 SO
Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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