Technical parameters/rated current: 10.0 mA
Technical parameters/drain source resistance: 175 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/Continuous drain current (Ids): 10.0 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-236
External dimensions/height: 1.02 mm
External dimensions/packaging: TO-236
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BF512,215
|
NXP | 功能相似 | SOT-23-3 |
N 通道 JFET,NXP ### JFET 晶体管 一系列 JFET(接线场效应晶体管)和 HEMT/HFET(高电子迁移率晶体管/异质结 FET)分立半导体设备。
|
||
BF556A,215
|
Philips | 功能相似 | TO-236 |
N 通道 JFET,NXP ### JFET 晶体管 一系列 JFET(接线场效应晶体管)和 HEMT/HFET(高电子迁移率晶体管/异质结 FET)分立半导体设备。
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review