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Model NE552R479A
Description Radio frequency metal oxide semiconductor field-effect transistor (RF MOSFET)
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2215) Minimum order quantity(1)
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Technical parameters/dissipated power: 100 mW

Technical parameters/output power: 26 dBm

Technical parameters/gain: 11 dB

Technical parameters/operating temperature (Max): 125 ℃

Encapsulation parameters/Encapsulation: 79A

External dimensions/packaging: 79A

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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