Technical parameters/drain source resistance: 22.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.10 W
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 7.50 A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO
External dimensions/packaging: SO
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
VISHAY | 类似代替 | SOIC |
MOSFET DUAL N-CH 30V 5.7A 8-SOIC
|
||
SI4830ADY-T1-GE3
|
Vishay Semiconductor | 类似代替 |
MOSFET DUAL N-CH 30V 5.7A 8-SOIC
|
|||
SI4830CDY-T1-GE3
|
Vishay Intertechnology | 功能相似 | SOIC |
MOSFET; Dual N-Ch; VDSS 30V; RDS(ON) 0.017Ω; ID 5.7A; SO-8; PD 1.1W; VGS +/-20V; gFS 1
|
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