Technical parameters/frequency: 180 MHz
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 625 mW
Technical parameters/DC current gain (hFE): 475
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FMMT718TA
|
Diodes | 完全替代 | SOT-23-3 |
三极管
|
||
FMMT718TA
|
Zetex | 完全替代 | SOT-23-3 |
三极管
|
||
PBSS4021PT
|
NXP | 功能相似 | SOT-23 |
PNP 晶体管,NXP 一系列 NXP BISS(小信号的重大突破)低饱和电压 PNP 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量,采用紧凑的空间节省型封装。 这些晶体管减少损失,可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极性晶体管,NXP Semiconductors
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