Technical parameters/drain source resistance: 1.25 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 250 mW
Technical parameters/drain source voltage (Vds): 60.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 330 mA
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-523
External dimensions/packaging: SOT-523
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI1022R-T1-GE3
|
Vishay Siliconix | 功能相似 | SC-75 |
60V 330mA 0.25W(1/4W) 1.25Ω @ 10V
|
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